name
Osadchiy Evgeniy Nikolaevich
Scholastic degree
•
Academic rank
associated professor
Honorary rank
—
Organization, job position
• South Federal University
доцент
Research interests
Твердотельная электроника и наноэлектроника микроволнового диапазона. Нелинейные устройства на наноструктурных диодах и транзисторах микроволнового диапазона.
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—Articles count: 1
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Description
The influence of auto-displacement in a resonancetunnel diode (RTD) on the dynamic range of amplifiers on these diodes is considered in the article. The amplification at resonance frequency is considered and the influence of higher harmonics is not taken into account, since they do not create a significant voltage drop at the nonlinear resistance of the diode. It is assumed that the gain will be sufficiently large, and then the nature of the dependence of the gain factors on the degree of regeneration will be the same for amplifiers "per pass" and "reflection". This allows us to consider the problem for both types of amplifiers on the RTD. The types of amplitude characteristics , which are possible for the RTD amplifier, are considered. The dependences of the parameter determining the dynamic range of the amplifier on the position of the operating point for several values of the product of the resistance on the direct current of the supply circuit are calculated for the value of the modulus of the maximum negative conductivity of the tunnel gap RG max. For each value of RG max for given parameters, you can determine the position of the operating point, which provides the specified amplifier mode. Dependences of the value of the dynamic range are constructed with allowance for auto-displacement and in the absence of auto-displacement for two values of the degree of regeneration. Taking into account autosplacement, two possible types of amplitude characteristics and boundaries of their existence were revealed. For these two types of amplitude characteristics, expressions were obtained that determine the dynamic range of the amplifier
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