№ 90(6), June, 2013
Public date: 30.06.2013
Archive of journal: Articles count 71, 157 kb
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01.00.00 Physical-mathematical sciences
01.00.00 Physical-mathematical sciences
DescriptionA model is developed for stress-dependent surface generation and recombination of point defects in silicon. Using the model, such phenomena as stacking fault growth and stress-mediated dopant diffusion in silicon are simulated